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Semiconductor wafer sputtering targets are the key consumables for depositing metal/alloy thin films on silicon wafers through the magnetron sputtering (PVD) process. Their material purity (up to 99.9999%) and grain orientation (<111>/<100>) directly affect the conductivity and reliability of the interconnect and barrier layers.
We provide high-purity, precisely engineered sputtering targets designed to meet the rigorous standards of the semiconductor industry. Our products support applications ranging from R&D and pilot production to full-scale manufacturing.
Ultra-High Purity Materials
Purity levels up to 99.999% minimize contamination, ensuring the integrity of deposited films in high-performance semiconductor applications.
Excellent Microstructure Control
Our targets feature homogeneous grain structure for uniform sputtering rates and optimal thin-film characteristics.
Dimensional Accuracy & Surface Quality
Each target is machined to tight tolerances and finished with a smooth or mirror-polished surface to ensure compatibility with modern PVD systems.
Bonded and Non-Bonded Options
Targets are available as bonded (with backplates) or monolithic, depending on your system and thermal requirements.
Wide Range of Material Options
Including but not limited to:
Pure Metals: Aluminum (Al), Copper (Cu), Tantalum (Ta), Tungsten (W), Titanium (Ti), Molybdenum (Mo), etc.
Alloys: AlSi, AlTi, TiW, TaNb
Compounds: Titanium Nitride (TiN), Tantalum Nitride (TaN), Indium Tin Oxide (ITO), and more.
| Semiconductor Application | Common Target Materials | Key Requirements |
|---|---|---|
| Wafer Metallization | Cu, Al, W | High purity, low defects, stable deposition rate |
| Barrier Layer | Ti, Ta, TaN | Excellent adhesion and diffusion barrier performance |
| Contact Layer | Ti, Ni, Co | Good electrical conductivity and interface stability |
| Advanced Packaging | Cu, Ti, Ni, Al | Customized dimensions and bonding compatibility |
| MEMS Fabrication | Al, Au, Pt, Ni | Process flexibility and material consistency |
| Semiconductor Research | Various metals and alloys | Small batch customization and fast delivery |
| Material | Main Application |
|---|---|
| Copper (Cu) Targets | Copper interconnects and conductive layers |
| Aluminum (Al) Targets | Metal wiring and electrode layers |
| Titanium (Ti) Targets | Adhesion layers and barrier structures |
| Tantalum (Ta) Targets | Diffusion barrier layers |
| Tungsten (W) Targets | Contact and electrode applications |
| Nickel (Ni) Targets | Semiconductor packaging and conductive films |
| Silicon (Si) Targets | Semiconductor and thin film applications |
| Specification | Description |
|---|---|
| Purity | 99.9% – 99.999% |
| Diameter/Size | 1" to 12" or as required |
| Thickness | Customizable |
| Bonding | Indium, Elastomer, or Direct |
| Surface Finish | Mirror polish or matte finish |
| Packaging | Vacuum-sealed, cleanroom-ready |
Semiconductor foundries (Fabless & IDM)
Research institutes and universities
Semiconductor equipment manufacturers
Thin-film coating companies
R&D labs and prototyping centers
Ultra-High Purity (up to 99.999%)
To meet the stringent requirements of semiconductor applications, we provide targets with ultra-low contamination levels, ensuring process stability and device performance.
Material Versatility
We offer a wide range of materials including:
Metals: Aluminum (Al), Copper (Cu), Titanium (Ti), Tantalum (Ta), Tungsten (W), Molybdenum (Mo), Cobalt (Co), etc.
Alloys & Compounds: TiN, AlTi, WSi, TaN, ITO, and more.
Custom Sizes & Shapes
Whether you need circular, rectangular, or uniquely designed targets, we can machine and bond them to your specifications.
Bonding Services Available
Target-to-backplate bonding is available using indium, elastomer, or other bonding methods for improved thermal management and durability.
Stable Supply & Fast Lead Time
We maintain consistent quality and can handle both prototype and bulk orders with short turnaround times.
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